Effect of N dopant amount on the performance of dye-sensitized solar cells based on N-Doped TiO2 electrodes

Journal of Physical Chemistry C

Volumn 115, Issue 43, 2011, Pages 21494-21499

  Guo, Wei ^a   Shen, Yihua ^a   Wu, Liqiong ^a   Gao, Yurong ^a   Ma, Tingli ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER RESISTANCE; DOPANT AMOUNT; DYE UPTAKE; DYE-SENSITIZED SOLAR CELL; ELECTRON LIFETIME; N-DOPED; N-DOPED TIO; OVERALL CONVERSION EFFICIENCY; PHOTOCURRENT DENSITY; TEMPLATE-FREE; WET METHOD;

CHARGE TRANSFER; CONVERSION EFFICIENCY; ELECTRODES; ION EXCHANGE; PHOTOELECTROCHEMICAL CELLS; SOLAR CELLS; TITANIUM DIOXIDE;

DOPING (ADDITIVES);

EID: 80055064170     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp2057496     Document Type: Article

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