Retarded charge recombination in dye-sensitized nitrogen-doped tio 2 solar cells

Journal of Physical Chemistry C

Volumn 114, Issue 3, 2010, Pages 1627-1632

  Tian, Huajun ^a   Hu, Linhua ^a   Zhang, Changneng ^a   Liu, Weiqing ^a   Huang, Yang ^a   Mo, Lie ^a   Guo, Lei ^a   Sheng, Jiang ^a   Dai, Songyuan ^a  

^a INSTITUTE OF PLASMA PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BACK ELECTRON TRANSFER; CHARGE RECOMBINATIONS; DSC SYSTEMS; DYE SENSITIZED; DYE-SENSITIZED SOLAR CELL; ELECTRON LIFETIME; FLAT BAND; HIGH TEMPERATURE CONDITION; IMPEDANCE SPECTRUM; NEGATIVE SHIFT; NITROGEN-DOPED; NITROGEN-DOPED FILMS; NITROGEN-DOPING; PHOTOVOLTAIC PERFORMANCE; RECOMBINATION REACTIONS; TIO; UV-VIS SPECTRUM; WAVELENGTH RANGES;

ABSORPTION SPECTROSCOPY; DIGITAL CAMERAS; DOPING (ADDITIVES); ELECTROCHEMICAL CORROSION; OPEN CIRCUIT VOLTAGE; OXYGEN; SOLAR CELLS; SOLAR POWER GENERATION; TITANIUM DIOXIDE;

NITROGEN;

EID: 77249105084     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp9103646     Document Type: Article

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