Very high residual resistivity ratios of heteroepitaxial superconducting niobium films on MgO substrates

Superconductor Science and Technology

Volumn 24, Issue 11, 2011, Pages

  Krishnan, M ^a   Valderrama, E ^a   Bures, B ^a   Wilson Elliott, K ^a   Zhao, X ^b   Phillips, L ^b   Valente Feliciano, A M ^b   Spradlin, J ^b   Reece, C ^b   Seo, K ^c  

^a ALAMEDA APPLIED SCIENCES CORPORATION   (United States)

^b THOMAS JEFFERSON NATIONAL ACCELERATOR FACILITY   (United States)

^c NORFOLK STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TEMPERATURES; ELECTRON MEAN FREE PATH; HETEROEPITAXIAL; HIGHER TEMPERATURES; IMPURITIES IN; MGO CRYSTALS; MGO SUBSTRATE; MGO(1 0 0); NB FILM; NB(100); POLE FIGURE; RESIDUAL RESISTIVITY RATIOS; SUBSTRATE ANNEALING; SUPERCONDUCTING NIOBIUM FILMS; VACUUM ARC DISCHARGES;

CRYSTAL GROWTH; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; FILM GROWTH; NIOBIUM; SUBSTRATES; SUPERCONDUCTING FILMS; VACUUM APPLICATIONS; X RAY DIFFRACTION;

CRYSTAL ORIENTATION;

EID: 80054936249     PISSN: 09532048     EISSN: 13616668     Source Type: Journal    
DOI: 10.1088/0953-2048/24/11/115002     Document Type: Article

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