SCOPUS 정보 검색 플랫폼

Volumn 21, Issue 43, 2011, Pages 17476-17482

Correlation between the electronic structures of transition metal oxide-based intermediate connectors and the device performance of tandem organic light-emitting devices

(7) Bao, Qin Ye a Yang, Jin Peng a Xiao, Yan a Deng, Yan Hong a Lee, Shuit Tong b Li, Yan Qing a Tang, Jian Xin a

a SOOCHOW UNIVERSITY (China)

b CITY UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE GENERATION; DEVICE PERFORMANCE; ELECTRO-LUMINESCENT; ELECTRON TRANSFER; ELECTRON-TRANSPORTING LAYERS; HETERO INTERFACES; HIGHEST OCCUPIED MOLECULAR ORBITAL; HOLE-TRANSPORTING LAYERS; INTERMEDIATE CONNECTORS; MG-DOPED; ORGANIC LIGHT-EMITTING DEVICES; SEPARATION PROCESS;

CURRENT DENSITY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; LIGHT EMISSION; MOLECULAR ORBITALS; MOLYBDENUM OXIDE; TRANSITION METALS;

TRANSITION METAL COMPOUNDS;

EID: 80054924622 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm12515j Document Type: Article

Times cited : (22)

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