Flux Bridgman growth and the influence of annealing temperatures on PL properties of ZnO single crystals

Crystal Research and Technology

Volumn 46, Issue 11, 2011, Pages 1107-1110

  Xu, Jiayue ^a   He, Qingbo ^a   Shen, Hui ^a   Jin, Min ^a   Zhang, Yan ^a   Li, Xinhua ^a  

^a SHANGHAI INSTITUTE OF TECHNOLOGY   (China)

Author keywords

annealing; defect; photoluminescence; ZnO single crystal

Indexed keywords

ANNEALED SAMPLES; ANNEALING TEMPERATURES; BLUE SHIFT; BRIDGMAN GROWTH; GREEN BAND; HIGH TEMPERATURE SOLUTIONS; HIGH-TEMPERATURE ANNEALING; PEAK POSITION; PL PROPERTY; PL SPECTRA; ULTRAVIOLET EMISSION; ULTRAVIOLET PEAKS; ZNO CRYSTALS; ZNO SINGLE CRYSTALS;

ANNEALING; CRYSTAL GROWTH FROM MELT; CRYSTAL GROWTH FROM SOLUTION; CRYSTAL IMPURITIES; DIFFRACTIVE OPTICS; HIGH TEMPERATURE EFFECTS; OXYGEN VACANCIES; PHOTOLUMINESCENCE; ZINC OXIDE;

SINGLE CRYSTALS;

EID: 80054909920     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.201100361     Document Type: Article

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