High efficient n-type back-junction back-contact silicon solar cells with screen-printed Al-alloyed emitter and effective emitter passivation study

Progress in Photovoltaics: Research and Applications

Volumn 19, Issue 7, 2011, Pages 781-786

  Gong, Chun ^a,b   Singh, Sukhvinder ^a   Robbelein, Jo ^a,b   Posthuma, Niels ^a   Van Kerschaver, Emmanuel ^a,c   Poortmans, Jef ^a,b   Mertens, Robert ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Solexel Inc   (United States)

Author keywords

Al doped emitter; back junction back contact solar cells; front surface field; n type; passivation

Indexed keywords

AL-DOPED EMITTER; APERTURE AREA; BACK-JUNCTION BACK-CONTACT SOLAR CELLS; BORON DIFFUSIONS; CELL EFFICIENCY; CELL PERFORMANCE; CLEANING PROCESS; FILL FACTOR; FRONT SURFACE FIELD; FRONT SURFACES; HIGH TEMPERATURE PROCESS; JUNCTION CELLS; LIGHT BEAM INDUCED CURRENT TECHNIQUES; N-TYPE; PASSIVATION LAYER; RESEARCH GROUPS; SCREEN-PRINTED; SI SOLAR CELLS; SILICATE GLASS; SURFACE DOPING;

ALUMINUM; BORON; CLEANING; EFFICIENCY; INDUCED CURRENTS; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; SILICON SOLAR CELLS;

SILICON WAFERS;

EID: 80054898400     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1035     Document Type: Article

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