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Volumn 12, Issue 1, 2012, Pages 17-22

Effects of controllable process factors on Al rear surface bumps in Si solar cells

Author keywords

Al bump; Al Si contact; Al Si eutectic alloy; Aluminum back surface field; Solar cells

Indexed keywords

AL-SI CONTACT; AL-SI EUTECTIC ALLOYS; ALUMINUM METAL; ALUMINUM POWDERS; ALUMINUM SURFACE; BACK REFLECTANCE; BACK SURFACE FIELDS; CONTACT POINTS; COOLING RATES; HIGH DENSITY; HIGH-EFFICIENCY SOLAR CELLS; PROCESS FACTOR; REAR SURFACES; SCREEN-PRINTED; SI SOLAR CELLS; SILICON SURFACES; UNIFORM TEMPERATURE;

EID: 80054812324     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.04.021     Document Type: Article
Times cited : (7)

References (12)
  • 6
    • 33646572544 scopus 로고    scopus 로고
    • A novel approach for co-firing optimization in RTP for the fabrication of large area mc-Si solar cell
    • kyunghae Kim, Suresh Kumar Dhungel, Utpal Gangopadhyay, Jinsu Yoo, Choi Won Seok, and Junsin Yi A novel approach for co-firing optimization in RTP for the fabrication of large area mc-Si solar cell Thin Solid Films 511-512 2006 228 234
    • (2006) Thin Solid Films , vol.511-512 , pp. 228-234
    • Kim, K.1    Dhungel, S.K.2    Gangopadhyay, U.3    Yoo, J.4    Seok, C.W.5    Yi, J.6
  • 7
    • 0342561567 scopus 로고    scopus 로고
    • Highest efficiency rapid thermal processed multicrystalline silicon solar cells
    • S. Noel, H. Lautenschlager, and C. Muller Highest efficiency rapid thermal processed multicrystalline silicon solar cells Progress in Photovoltaics 9 2001 41 47
    • (2001) Progress in Photovoltaics , vol.9 , pp. 41-47
    • Noel, S.1    Lautenschlager, H.2    Muller, C.3
  • 9
    • 0032664043 scopus 로고    scopus 로고
    • An Optimized rapid aluminum back surface field Technique for silicon solar cells
    • Shreesh Narasimha, Ajeet Rohatgi, and A.W. Weeber An Optimized rapid aluminum back surface field Technique for silicon solar cells IEEE Transactions on Electron Devices 46 7 1999 1363 1370
    • (1999) IEEE Transactions on Electron Devices , vol.467 , pp. 1363-1370
    • Narasimha, S.1    Rohatgi, A.2    Weeber, A.W.3
  • 11
    • 0015036776 scopus 로고
    • The effects of alloying material on regrowth-layer structure in silicon power devices
    • F.M. Roberts, and E.G. Wilkinson The effects of alloying material on regrowth-layer structure in silicon power devices Journal of Materials Science 6 1971 189 199
    • (1971) Journal of Materials Science , vol.6 , pp. 189-199
    • Roberts, F.M.1    Wilkinson, E.G.2
  • 12
    • 0342849817 scopus 로고
    • The controlling factors in semiconductor large area alloying technology
    • F.M. Roberts, and E.G. Wilkinson The controlling factors in semiconductor large area alloying technology Journal of Materials Science 3 1968 110 119
    • (1968) Journal of Materials Science , vol.3 , pp. 110-119
    • Roberts, F.M.1    Wilkinson, E.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.