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Journal of Structural Chemistry

Volumn 52, Issue 4, 2011, Pages 785-802

Modeling of the electronic structure, chemical bonding, and properties of ternary silicon carbide Ti3SiC2

(3) Medvedeva, N I a Enyashin, A N a Ivanovskii, A L a

a INSTITUTE OF SOLID STATE CHEMISTRY (Russian Federation)

Author keywords

electronic structure; quantum chemical modeling; ternary layered compounds M n+1AX n; titanium silicon carbide

Indexed keywords

EID: 80054771999 PISSN: 00224766 EISSN: None Source Type: Journal
DOI: 10.1134/S0022476611040226 Document Type: Article

Times cited : (57)

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