Electronic structure of 18R-SnS2 crystal

Journal of Optoelectronics and Advanced Materials

Volumn 12, Issue 11, 2010, Pages 2236-2241

  Bletskan, D I ^a   Frolova, V V ^a   Glukhov, K E ^a  

^a UZHGOROD NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Density of states; Electronic band structure; Optical gap; Polytypism; Selection rules; Tin disulphide

Indexed keywords

BAND STRUCTURE; CRYSTAL STRUCTURE; CRYSTALS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; IV-VI SEMICONDUCTORS; SEMICONDUCTING TIN COMPOUNDS; TIN COMPOUNDS;

DENSITY OF STATE; ELECTRONIC BAND STRUCTURE; OPTICAL GAP; POLYTYPISM; SELECTION RULES; TIN DISULPHIDE;

SULFUR COMPOUNDS;

EID: 80054709128     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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