Room temperature ferromagnetism in Tb doped ZnO nanocrystalline films

Journal of Magnetism and Magnetic Materials

Volumn 324, Issue 4, 2012, Pages 642-644

  Wu, Z ^a   Liu, X C ^a,b,c   Huang, J C A ^c  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b Tianwei New Energy Holdings Co Ltd   (China)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Magnetic semiconductor; Magnetism; Silicon

Indexed keywords

ELECTRICAL PROPERTY; ION-BEAM SPUTTERING; NANOCRYSTALLINES; ROOM TEMPERATURE; ROOM TEMPERATURE FERROMAGNETISM; SECONDARY PHASE; STRUCTURE PROPERTY; TB-DOPED; TB-DOPED ZNO FILMS; ZNO;

ELECTRIC PROPERTIES; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; SATURATION MAGNETIZATION; SEMICONDUCTING SILICON COMPOUNDS; ZINC OXIDE;

FERROMAGNETISM;

EID: 80054072078     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2011.08.017     Document Type: Article

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