Removal rate of phosphorus from molten silicon

High Temperature Materials and Processes

Volumn 30, Issue 1-2, 2011, Pages 17-22

  Kemmotsu, Takayuki ^a   Nagai, Takashi ^a   Maeda, Masafumi ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Electron beam; Phosphorus; Silicon; Solar cell

Indexed keywords

EXPERIMENTAL FACTORS; HIGH VACUUM; MOLTEN SILICON; REACTANT GAS; REMOVAL RATE; RESIDUAL GAS PRESSURE; VACUUM CHAMBERS;

ELECTRON BEAMS; SILICON; SOLAR CELLS; VACUUM;

PHOSPHORUS;

EID: 80053992728     PISSN: 03346455     EISSN: None     Source Type: Journal    
DOI: 10.1515/HTMP.2011.002     Document Type: Article

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