Understanding the effects of dielectric medium, substrate, and depth on electric fields and SERS of quasi-3D plasmonic nanostructures

Optics Express

Volumn 19, Issue 21, 2011, Pages 20493-20505

  Xu, Jiajie ^a,c   Kvasnička, Pavel ^b   Idso, Matthew ^a   Jordan, Roger W ^d   Gong, Heng ^c   Homola, Jiří ^b   Yu, Qiuming ^a  

^a University of Washington   (United States)

^b INSTITUTE OF PHOTONICS AND ELECTRONICS   (Czech Republic)

^c EAST CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^d Texas A and M University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; FINITE DIFFERENCE TIME DOMAIN METHOD; GOLD; ITO GLASS; NANOSTRUCTURES; PLASMONS; RAMAN SPECTROSCOPY; THREE DIMENSIONAL; TIME DOMAIN ANALYSIS;

3D FDTD; 785 NM LASERS; COATED GLASS SUBSTRATES; DIELECTRIC MEDIUM; ENHANCEMENT FACTOR; FINITE DIFFERENCE TIME DOMAINS; GOLD LAYER; HIGHLY SENSITIVE; INTERFERENCE EFFECTS; LOCAL ELECTRIC FIELD; LOCALIZED SURFACE PLASMON; NANODISCS; NANOHOLES; PLASMONIC NANOSTRUCTURES; QUASI-3D; SURFACE ENHANCED RAMAN SPECTROSCOPY;

SUBSTRATES;

GOLD; METAL NANOPARTICLE; NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; COMPUTER SIMULATION; ELECTRICITY; EQUIPMENT DESIGN; GENETIC PROCEDURES; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; OPTICS; OSCILLOMETRY;

BIOSENSING TECHNIQUES; COMPUTER SIMULATION; ELECTRICITY; EQUIPMENT DESIGN; GOLD; MATERIALS TESTING; METAL NANOPARTICLES; NANOSTRUCTURES; NANOTECHNOLOGY; OPTICS AND PHOTONICS; OSCILLOMETRY; SILICON;

EID: 80053973740     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.19.020493     Document Type: Article

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