High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors

Applied Physics Letters

Volumn 99, Issue 13, 2011, Pages

  Karar, Ayman ^a   Das, Narottam ^a,d   Leong Tan, Chee ^b   Alameh, Kamal ^a,b   Tak Lee, Yong ^b   Karouta, Fouad ^c  

^a EDITH COWAN UNIVERSITY   (Australia)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d CURTIN UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL CHARACTERIZATION; GAAS; HIGH-SPEED; METAL SEMICONDUCTOR METAL PHOTODETECTOR; NANO-GRATINGS; PHOTOCURRENT ENHANCEMENT; RESPONSIVITY;

BIAS VOLTAGE; GALLIUM ARSENIDE; HETEROJUNCTIONS; METALS; PLASMONS; SEMICONDUCTING GALLIUM;

PHOTODETECTORS;

EID: 80053556474     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3625937     Document Type: Article

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