Short circuit transient behavior of IGBT devices in series connections

IEEE International Symposium on Industrial Electronics

Volumn 3, Issue , 2002, Pages 878-883

  Frisina, F ^b   Melito, M ^b   Musumeci, S ^a   Pagano, R ^a   Raciti, A ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FAULT CURRENTS; INDUSTRIAL ELECTRONICS; TIMING CIRCUITS;

CRITICAL CONDITION; DEVICE PARAMETERS; ELECTRICAL QUANTITIES; EXPERIMENTAL TEST; HARD SWITCHING FAULTS; SERIES CONNECTIONS; SHORT-CIRCUIT CONDITIONS; TRANSIENT BEHAVIOR;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 80053482694     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/isie.2002.1025849     Document Type: Conference Paper

References (7)

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7. R. Letor, G. C. Aniceto, "Short Circuit Behavior of IGBT's Correlated to the Intrinsic Device Structure and on the Application Circuit." IEEE Transactions on Industry Applications. Vol. 31. No. 2, March-April. 1995, pp. 234-239.