Ab initio study of II(VI)2 dichalcogenides

Journal of Physics Condensed Matter

Volumn 23, Issue 40, 2011, Pages

  Olsson, P ^a,b,c   Vidal, J ^a,d   Lincot, D ^a  

^a CNRS   (France)

^b EDF R AND D   (France)

^c ALBANOVA UNIVERSITY CENTER   (Sweden)

^d European Theoretical Spectroscopy Facility ETSF   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; AB INITIO STUDY; ABSORBER MATERIAL; ABSORPTION COEFFICIENTS; BAND GAPS; DICHALCOGENIDES; EFFECTIVE MASS; INDIRECT SEMICONDUCTOR; OPTOELECTRONIC PROPERTIES; PHOTOVOLTAIC APPLICATIONS; QUASI PARTICLES; REFRACTION INDEX; SEMICONDUCTOR COMPOUNDS; STRUCTURAL PARAMETER; STRUCTURAL STABILITIES;

ELECTRONIC PROPERTIES; STABILITY; SURFACE PROPERTIES; ZINC COMPOUNDS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 80053323454     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/23/40/405801     Document Type: Article

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