SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 40, Issue 10, 2011, Pages 2063-2068

Effect of Ce-doping on thermoelectric properties in PbTe alloys prepared by spark plasma sintering

(6) Li, J Q a Li, S P a Wang, Q B a Wang, L a Liu, F S a Ao, W Q a

a SHENZHEN UNIVERSITY (China)

Author keywords

Ce doping; PbTe semiconductor; thermoelectric properties

Indexed keywords

CE CONTENTS; CE-DOPING; DOPED SAMPLE; ELECTRICAL RESISTIVITY; INDUCTION MELTING; N-TYPE CONDUCTION; P-TYPE CONDUCTION; PBTE; SECONDARY PHASIS; SINGLE PHASE; THERMOELECTRIC PROPERTIES;

ALLOYS; BALL MILLING; ELECTRIC CONDUCTIVITY; ELECTRIC SPARKS; LEAD; SEMICONDUCTOR DOPING; SODIUM CHLORIDE; SPARK PLASMA SINTERING; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TUNGSTEN; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

THERMAL CONDUCTIVITY OF SOLIDS;

EID: 80052969143 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-011-1715-9 Document Type: Article

Times cited : (21)

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