Bismuth tri-iodide radiation detector development

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7449, Issue , 2009, Pages

  Lintereur, Azaree T ^a   Qiu, Wei ^b   Nino, Juan C ^b   Baciak, James E ^a  

^a UNIVERSITY OF FLORIDA   (United States)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Bismuth tri iodide; Gamma ray spectroscopy; Radiation detection; Vertical Bridgman crystal growth

Indexed keywords

ATOMIC NUMBERS; BAND GAPS; GAMMA-RAY SPECTROSCOPY; GROWTH PARAMETERS; HIGH DENSITY; HIGH RESOLUTION; I - V CURVE; MATERIAL PROPERTY; MODIFIED VERTICAL BRIDGMAN; PALLADIUM ELECTRODES; PHOTO PEAKS; POLYCRYSTALLINE; RADIATION DETECTION; ROOM TEMPERATURE; STARTING MATERIALS; TEMPERATURE GRADIENT; UV-VIS SPECTRA; VERTICAL BRIDGMAN CRYSTAL GROWTH; WIDE-BAND-GAP SEMICONDUCTOR;

ATOMS; BISMUTH; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRODES; GAMMA RAY SPECTROMETERS; GAMMA RAYS; GRAIN BOUNDARIES; MATERIALS PROPERTIES; METAL REFINING; NEUTRON DETECTORS; PALLADIUM; POLYCRYSTALLINE MATERIALS; RADIATION DETECTORS; SEMICONDUCTOR GROWTH; STARS; STRUCTURAL OPTIMIZATION; THERMAL GRADIENTS;

SINGLE CRYSTALS;

EID: 71549114844     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.825037     Document Type: Conference Paper

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