A non-volatile look-up table design using PCM (phase-change memory) cells

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2011, Pages 302-303

  Wen, C Y ^a   Li, J ^b   Kim, S ^b   Breitwisch, M ^b   Lam, C ^b   Paramesh, J ^a   Pileggi, L T ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGY; LOGIC FUNCTIONS; LOOK UP TABLE; NON-VOLATILE; PCRAM CELLS; PHASE CHANGES; PHASE-CHANGE RANDOM ACCESS MEMORY; PROPAGATION DELAYS; TRANSFORMATION RATIO;

CMOS INTEGRATED CIRCUITS; DIGITAL CIRCUITS; GERMANIUM; RANDOM ACCESS STORAGE; TABLE LOOKUP; VLSI CIRCUITS;

PHASE CHANGE MEMORY;

EID: 80052661765     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S. Lai, "Current status of the phase change memory and its future", IEDM, 2003, pp. 10.1.1-4.
2. Cheng-Yuan Wen et al., "A Phase-change via-Reconfigurable On-Chip Inductor", IEDM, 2010, pp. 237-240.
3. K. N. Chen et al., "Programmable via Using Indirectly Heated Phase-Change Switch for Reconfigurable Logic Applications", IEEE Electron Device Letters, vol. 29, 2008, pp. 131.
4. Daisuke Suzuki et al., "Fabrication of a Nonvolatile Lookup-Table Circuit Chip Using Magneto/Semiconductor-Hybrid Structure for an Immediate-Power-Up Field Programmable Gate Array", IEEE VLSI Circuits Symposium, 2009, pp. 80-81.
5. M. Sekikawa et al., "A Novel SPRAM (Spin-transfer torque RAM)-based Reconfigurable Logic Block for 3D-Stacked reconfigurable Spin Processor", IEDM, 2008, pp. 1-3.