Dynamic lock-in thermography for operation mode-dependent thermally active fault localization

Microelectronics Reliability

Volumn 50, Issue 9-11, 2010, Pages 1454-1458

  Schlangen, R ^a   Deslandes, H ^a   Lundquist, T ^a   Schmidt, C ^b   Altmann, F ^b   Yu, K ^c   Andreasyan, A ^c   Li, S ^c  

^a DCG SYSTEMS INC   (United States)

^b FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

^c Submicron Development Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEFECTS; ACTIVE FAULT; EXTREME TEMPERATURES; LOCK-IN; LOCKIN THERMOGRAPHY; NON DESTRUCTIVE; OPERATION MODE; RESISTIVE OPEN; WORK-FLOWS;

DEFECTS; EVOLUTIONARY ALGORITHMS;

THERMOGRAPHY (TEMPERATURE MEASUREMENT);

EID: 80052632831     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.082     Document Type: Conference Paper

References (6)

1. Khandekar S et al. Liquid crystal microscopy. Microelectronic failure analysis desk reference. 4th ed. EDFAS; 2002. p.739-44.
2. Breitenstein O et al. Developments in IR lock-in thermography. In: Proc 30th int symp for testing and failure analysis; November 2004. p. 595-9.
3. Schmidt C et al. Lock-in-thermography for 3-dimensional localization of electrical defects inside complex packaged devices. In: Proc 34th int symp for testing and failure analysis; November 2008. p. 102-7.
4. Beaudoin F et al. Principles of thermal laser stimulation techniques. Microelectronics failures analysis desk reference. 5th ed. ASM International; 2004.
5. Schmidt C, Große C, Altmann F. Non-destructive defect depth determination at fully packaged and stacked die devices using lock-in thermography. In: 17th international symposium on the physical and failure analysis of integrated circuits (IPFA); July 2010. p. 359-63.
6. F. Beaudoin Dynamic laser stimulation techniques for advanced failure analysis and design debug applications Microelectron Reliab 47 9-11 2007 1517 1522