Spatial variations of optoelectronic properties in single crystalline CuGaSe2 thin films studied by photoluminescence

Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7332-7336

  Larsen, Jes K ^a   Gütay, Levent ^a   Aida, Yasuhiro ^a,b   Siebentritt, Susanne ^a  

^a UNIVERSITY OF LUXEMBOURG   (Luxembourg)

^b TDK CORPORATION   (Japan)

Author keywords

Chalcopyrite; CuGaSe2; Epitaxy; Inhomogeneities; Photoluminescence

Indexed keywords

ABSORBER LAYERS; ALLOYING EFFECT; BAND GAP VARIATION; CHALCOPYRITE; CU(IN , GA)SE; CU-POOR; CUGASE2; EPITAXIALLY GROWN; GAAS SUBSTRATES; INHOMOGENEITIES; OPTOELECTRONIC PROPERTIES; POLYCRYSTALLINE; QUASI-FERMI LEVEL; ROOM TEMPERATURE; SECONDARY PHASE; SINGLE-CRYSTALLINE; SPATIAL VARIATIONS; SPATIALLY RESOLVED; STRAIN EFFECT;

COPPER COMPOUNDS; ELECTRONIC STRUCTURE; ENERGY GAP; EPITAXIAL GROWTH; GALLIUM; GALLIUM ALLOYS; SEMICONDUCTING SELENIUM COMPOUNDS; SINGLE CRYSTALS; THIN FILMS;

PHOTOLUMINESCENCE;

EID: 80052174917     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.213     Document Type: Conference Paper

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