Phases in copper-gallium-metal-sulfide films (metal=titanium, iron, or tin)

Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7284-7287

  Marsen, B ^a   Klemz, S ^a   Landi, G ^a   Steinkopf, L ^a   Scheer, R ^b   Schorr, S ^c   Schock, H W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^c FREIE UNIVERSITÄT BERLIN   (Germany)

Author keywords

Cu 4TiS4; Cu2SnS3; CuFeS2; CuGaS2; Intermediate band; Thin film solar cell

Indexed keywords

CUBIC MODIFICATIONS; CUFES2; CUGAS2; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; IMPURITY CONCENTRATION; INTERMEDIATE BANDS; METAL IMPURITIES; MISCIBILITY GAP; SUBSTRATE TEMPERATURE; TERNARY PHASIS; THERMAL CO-EVAPORATION; THIN FILM SOLAR CELL;

COPPER COMPOUNDS; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM; GALLIUM ALLOYS; IMPURITIES; IRON ALLOYS; SOLUBILITY; SUBSTRATES; THERMAL EVAPORATION; TIN; TITANIUM; X RAY DIFFRACTION;

COPPER;

EID: 80052156090     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.137     Document Type: Conference Paper

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