Formation of shallow p+/n junction in silicon by non-melt laser annealing

Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011

Volumn , Issue , 2011, Pages 132-135

  Aid, Siti Rahmah ^a   Matsumoto, Satoru ^a   Fuse, Genshu ^b   Sakuragi, Susumu ^c  

^a KEIO UNIVERSITY   (Japan)

^b SEN Corporation   (Japan)

^c SUMITOMO HEAVY INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; ANNEALING TIME; B IMPLANTATION; BORON DIFFUSIONS; DOPANT DIFFUSION; GREEN LASER; IMPLANTED LAYERS; IMPLANTED SAMPLES; KRF LASERS; LASER SOURCES; LOW ENERGIES; NON-MELT LASER ANNEALING; PRE-AMORPHIZATION IMPLANTATION; PULSE DURATIONS;

BORON; BORON COMPOUNDS; DIFFUSION IN SOLIDS; EXCIMER LASERS; GERMANIUM;

ANNEALING;

EID: 80052133408     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2011.5970017     Document Type: Conference Paper

References (15)

1. H.Dennard et.al, IEEEJ. Solid-State Circuits, SC-9, p.256 (1974)
2. H.W. Kennel et.al, The 14th IEEE Intl. Conf. on Adv. Thermal Proc. of Semiconductors - RTP 2006 (2006), p.85
3. T. Yamamoto et.al, Ext. Abs. of The 5th Workshop on Junction Technology 2005 (2005), p.19
4. R. Kaneko, S. Matsumoto et. al., The 9th Int' Workshop on Junction Technology-IWJT, (June 11-12, 2009, Kyoto, Japan) p. 116-118
5. N. E. B. Cowern et.al, Nucl. Inst. Meth. in Phys. Res. B. 148, p. 257 (1999)
6. S.Soshi, Undergraduate Graduation Thesis, Matsumoto Laboratory, Department of Electronics and Electrical Engineering, Keio University, Tokyo (2005) - Unpublished results
7. C.K. Ong et.al, Opt. Soc. Am. B 3(5), p.812 (1986)
8. G. E. Jellison, in: Pulsed Laser Processing of Semiconductors, volume 23 of Semiconductors and Semimetals, ed R. F. Wood, C. W. White, and R. T. Young (Academic Press, Orlando,1984) p. 116
9. W.E. Beadle et.al, Quick Reference Manual for Silicon Integrated Technology, (Wiley Interscience, New York, 1985) p. 1-8
10. E.P. Donovan et.al, Appl. Phys. Lett. 42, p.698 (1983)
11. C. Bonafos et.al, J. Appl. Phys. 83, p. 3008 (1998)
12. th IEEE Int. Conf. on Advanced Thermal Processing of Semiconductors, 2004 (2004) IEEE Cat. No. 03EX847, p. 4.
13. A.E. Bell, RCA Rev. 40, p. 295 (1979)
14. R. F. Wood et.al, Semiconductors and Semimetals 26, p.116 (1984)
15. S. C. Jain et.al, J. Appl. Phys. 91, p. 8919 (2002)