High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111)

2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

Volumn , Issue , 2011, Pages

  Nguyen, H P T ^a   Zhang, S ^a   Cui, K ^a   Han, X ^a   Mi, Z ^a  

^a MCGILL UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY;

DOT SIZE; HIGH-EFFICIENCY; INGAN/GAN; INTERNAL QUANTUM EFFICIENCY; SI (1 1 1); WHITE EMISSIONS;

EFFICIENCY;

EID: 80052122172     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1364/cleo_si.2011.cmu4     Document Type: Conference Paper

References (6)

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2. W. Guo, M. Zhang, A. Banerjee, and P. Bhattacharya, "Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy", Nano Lett., 10 (9), pp 3355-3359 (2010).
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