Intrinsic effects of double side collecting silicon solar cells

Energy Procedia

Volumn 8, Issue , 2011, Pages 160-166

  Greulich, Johannes ^a,b   Glatthaar, Markus ^a,c   Fertig, Fabian ^a   Clement, Florian ^a   Thaidigsmann, Benjamin ^a   Fallisch, Arne ^a   Biro, Daniel ^a   Rüdiger, Marc ^a   Hermle, Martin ^a   Rein, Stefan ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

^c RENA GmbH   (Germany)

Author keywords

Base resistivity; Fill factor; Luminescence; Silicon; Simulation; Solar cell

Indexed keywords

COLLECTOR EFFICIENCY; LUMINESCENCE; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR QUANTUM WELLS; SILICON; SOLAR CELLS;

CONTINUITY EQUATIONS; EMITTER-WRAP-THROUGH; FILL FACTOR; ILLUMINATION LEVELS; LOW-LEVEL INJECTION CONDITIONS; PHOTOLUMINESCENCE IMAGES; SIMULATION; TWO-DIMENSIONAL NUMERICAL SIMULATION;

SILICON SOLAR CELLS;

EID: 80052094735     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.118     Document Type: Conference Paper

References (4)

1. Strahm B, Andrault Y, Bätzner D, Guérin C, Holmes N, Kobas M, Lachenal D, Mendes B, Tesfai M, Wahli G, Wuensch F, Büchel A, Mai J, Schulze T, Vogt M, Progress in Silicon Hetero-junction solar cell development and scaling for large scale mass production use, Proceedings of the European PVSEC 2010.
2. D. Lachenal, Y. Andrault, D. Bätzner, C. Guerin, M. Kobas, B. Mendes, B. Strahm, M. Tesfai, G. Wahli, A. Buechel; High efficiency silicon heterojunction solar cell activities in Neuchatel, switzerland, Proceedings of the European PVSEC 2010.
3. Singh P, Singh SN, Lal M, Husain M, Temperature dependence of I-V characteristics and performance parameters of silicon solar cell, Solar Energy Materials & Solar Cells 92 (2008) 1611-1616.
4. F. Tanay F, Dubois F, Enjalbert N, Veirman J; Low temperature-coefficient for solar cells processed from solar-grade silicon purified by metallurgical route, Prog. Photovolt: Res. Appl. (2011), DOI: 10.1002.