New measurement method for the investigation of space charge region recombination losses induced by the metallization of silicon solar cells

Energy Procedia

Volumn 8, Issue , 2011, Pages 694-699

  Hoenig, R ^a   Glatthaar, M ^a,c   Clement, F ^a   Greulich, J ^a   Wilde, J ^b   Biro, D ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

^c RENA GmbH   (Germany)

Author keywords

Front side metallization; Silicon solar cell; Space charge region recombination; Thick film contacts

Indexed keywords

CURVE FITTING; ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; METALLIZING; METALS; SILICON; SILVER; SOLAR CELLS; THICK FILMS;

NEW MEASUREMENT METHOD; QUANTITATIVE DETERMINATIONS; QUANTITATIVE EVALUATION; SATURATION CURRENT DENSITIES; SERIES RESISTANCES; SILVER THICK FILMS; SPACE CHARGE REGIONS; THICK-FILM CONTACT;

SILICON SOLAR CELLS;

EID: 80052080793     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.203     Document Type: Conference Paper

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