Temporary passivation of Cu for low temperature (< 300°C) 3D wafer stacking

2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011

Volumn , Issue , 2011, Pages

  Lim, D F ^a   Wei, J ^c   Leong, K C ^d   Tan, C S ^a,b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b RESEARCH TECHNO PLAZA   (Singapore)

^c SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^d GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CU SURFACES; DEGREE OF PROTECTION; LOW TEMPERATURES; STRENGTH ENHANCEMENT; SURFACE OXIDATIONS; WAFER STACKING; WAFER TO WAFER BONDING;

CHAIN LENGTH; METALLIZING; OXIDATION; PARAFFINS; PASSIVATION; SELF ASSEMBLED MONOLAYERS; SHEAR STRENGTH; SURFACE ANALYSIS; SURFACE CHEMISTRY; SURFACES; THERMAL DESORPTION; THERMODYNAMIC STABILITY;

WAFER BONDING;

EID: 80052062328     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2011.5940337     Document Type: Conference Paper

References (7)

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7. CRC Handbook of Chemistry and Physics, 2006