Constrained codes for phase-change memories

2010 IEEE Information Theory Workshop, ITW 2010 - Proceedings

Volumn , Issue , 2010, Pages

  Jiang, Anxiao ^a   Bruck, Jehoshua ^b   Li, Hao ^a  

^a TEXAS A AND M UNIVERSITY   (United States)

^b California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL DENSITY; CELL SIZE; CELL STATE; CONSTRAINED CODES; EMERGING NON-VOLATILE MEMORY TECHNOLOGY; HIGH TEMPERATURE; INTERFERENCE PROBLEMS; PHASE CHANGES; SCALING DOWN;

INFORMATION THEORY;

PHASE CHANGE MEMORY;

EID: 80051920541     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CIG.2010.5592680     Document Type: Conference Paper

References (6)

1. G. W. Burr et al., "Phase change memory technology," Journal of Vacuum Science and Technology, vol. 28, no. 2, pp. 223-262, Mar. 2010.
2. A. Jiang, J. Bruck and H. Li, "Constrained codes for phase-change memories," online: http://faculty.cse.tamu.edu/ajiang/PCM.pdf.
3. L. A. Lastras-Montano, M. Franceschini, T. Mittelholzer, J. Karidis and M. Wegman, "On the lifetime of multilevel memories," in Proc. IEEE International Symposium on Information Theory, Seoul, Korea, 2009, pp. 1224-1228.
4. B. H. Marcus, R. M. Roth and P. H. Siegel, An introduction to coding for constrained systems, 5th Edition, 2001, online: http://www.math.ubc. ca/marcus/Handbook/index.html.
5. A. Pirovano et al., "Reliability study of phase-change nonvolatile memories," IEEE Trans. Device and Materials Reliability, vol. 4, no. 3, pp. 422-427, Sep. 2004.
6. R. L. Rivest and A. Shamir, "How to reuse a 'write-once' memory," Information and Control, vol. 55, pp. 1-19, 1982.