Interfacial electronic structures between fullerene and multilayer graphene for n-type organic semiconducting devices

Carbon

Volumn 49, Issue 14, 2011, Pages 4936-4939

  Yi, Yeonjin ^a   Choi, Won Mook ^b   Son, Byoungchul ^c   Kim, Jeong Won ^c   Kang, Seong Jun ^d  

^a Yonsei University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

^d Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; ELECTRON-INJECTION BARRIER; ENERGY LEVEL ALIGNMENT; ENERGY LEVEL DIAGRAMS; HIGHEST OCCUPIED MOLECULAR ORBITAL; HOLE INJECTION BARRIER HEIGHT; IN-SITU; INTERFACIAL ELECTRONIC STRUCTURE; STEP-BY-STEP; VACUUM LEVEL;

BINDING ENERGY; ELECTRON INJECTION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; FULLERENES; GRAPHENE; MOLECULAR ORBITALS; MULTILAYERS; PHASE INTERFACES; PHOTOELECTRICITY; PHOTONS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTOELECTRON SPECTROSCOPY;

EID: 80051782938     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2011.07.021     Document Type: Article

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