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Integrated Ferroelectrics

Volumn 126, Issue 1, 2011, Pages 21-27

MOCVD growth of compositionally graded BaxSr 1-xTiO3 thin films

(6) Sbrockey, N M a Cole, M W b Kalkur, T S c Luong, M a Spanier, J E d Tompa, G S a

a STRUCTURED MATERIALS INDUSTRIES INC (United States)

b U S ARMY RESEARCH LABORATORY (United States)

c University of Colorado at Colorado Springs (United States)

d Drexel University (United States)

Author keywords

BST; Compositional Grading; Ferroelectric; MOCVD; RF Filters; Thin Films

Indexed keywords

BAXSR1-XTIO3; BST; BST THIN FILMS; COMPOSITIONAL GRADING; DIELECTRIC PERMITTIVITIES; DOPANT PROFILE; FERROELECTRIC; FLASH EVAPORATION; MOCVD GROWTH; MULTIPLE INJECTIONS; RADAR APPLICATIONS; RF DEVICES; RF FILTERS; TIO; TUNABILITIES;

BARIUM; FERROELECTRICITY; MEMS; PIEZOELECTRIC DEVICES; PIEZOELECTRIC MATERIALS; PIEZOELECTRICITY; WAVE FILTERS;

THIN FILMS;

EID: 80051677327 PISSN: 10584587 EISSN: 16078489 Source Type: Journal
DOI: 10.1080/10584587.2011.574975 Document Type: Conference Paper

Times cited : (26)

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