Synthesis and characterization of silicon-doped gallium oxide nanowires for optoelectronic UV applications

Journal of Nanoparticle Research

Volumn 13, Issue 5, 2011, Pages 1833-1839

  Díaz, Joaquín ^a   López, Iñaki ^a   Nogales, Emilio ^a   Méndez, Bianchi ^a   Piqueras, Javier ^a  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Dopant; Gallium oxide; Nanowire; Silicon

Indexed keywords

DOPANT; EMISSION BANDS; GALLIUM OXIDE; GALLIUM OXIDE NANOWIRES; GALLIUM OXIDES; GROWTH MECHANISMS; HIGH-CRYSTALLINE QUALITY; IMPURITIES IN; MORPHOLOGICAL CHARACTERIZATION; OXYGEN VACANCY DEFECTS; PRECURSOR MATERIALS; ROOM TEMPERATURE; SILICON POWDERS; THERMAL METHODS; UNIFORM DISTRIBUTION;

DOPING (ADDITIVES); GALLIUM; NANOWIRES; OXYGEN VACANCIES; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

METALLIC COMPOUNDS;

NANOMATERIAL; NANOWIRE; OXYGEN; SILICON; SILICON DOPED GALLIUM OXIDE NANOWIRE; UNCLASSIFIED DRUG;

ARTICLE; CONTROLLED STUDY; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; ELECTRONICS; ENERGY DISPERSIVE X RAY MICROANALYSIS; LUMINESCENCE; NANOTECHNOLOGY; OPTOELECTRONICS; PHYSICAL CHEMISTRY; PHYSICAL PHENOMENA; POWDER; PRIORITY JOURNAL; QUALITY CONTROL; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPY; SELECTED AREA ELECTRON DIFFRACTION; SYNTHESIS; TEMPERATURE CATHODOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; VAPOR LIQUID SOLID PROCESS; VAPOR SOLID PROCESS; X RAY MICROANALYSIS;

EID: 80051673121     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-011-0370-7     Document Type: Article

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