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Journal of Materials Chemistry

Volumn 21, Issue 33, 2011, Pages 12398-12401

Enhanced thermoelectric performance in In1-xGaxSb originating from the scattering of point defects and nanoinclusion

(8) Zhang, Qiushi a Xiong, Zhen a Jiang, Jun a Li, Wei a Xu, Gaojie a Bai, Shengqiang b Cui, Ping a Chen, Lidong b

a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING (China)

b SHANGHAI INSTITUTE OF CERAMICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL TRANSPORT; HIGH THERMAL CONDUCTIVITY; INTERMEDIATE TEMPERATURES; LATTICE THERMAL CONDUCTIVITY; MATRIX; NANO INCLUSION; THERMOELECTRIC PERFORMANCE;

CRYSTAL STRUCTURE; INDIUM ANTIMONIDES; POINT DEFECTS;

THERMAL CONDUCTIVITY;

EID: 80051660840 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm10542f Document Type: Article

Times cited : (41)

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