Large GMI effect in Co-rich amorphous wire by tensile stress

Journal of Magnetism and Magnetic Materials

Volumn 323, Issue 23, 2011, Pages 3018-3021

  Zhang, S L ^a,b   Sun, J F ^a   Xing, D W ^a   Qin, F X ^c   Peng, H X ^c  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b TAIYUAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

Amorphous wires; GMI effect; Magnetization

Indexed keywords

AMORPHOUS WIRE; FIELD SENSITIVITY; GIANT MAGNETO IMPEDANCE EFFECT; GMI EFFECTS; LOWER STRESS; SENSOR APPLICATIONS; STRESS EVOLUTION;

AMORPHOUS SILICON; WIRE;

TENSILE STRESS;

EID: 80051591959     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2011.06.041     Document Type: Article

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