Status of p-on-n arsenic-implanted HgCdTe technologies

Journal of Electronic Materials

Volumn 40, Issue 8, 2011, Pages 1830-1839

  Mollard, L ^a   Destefanis, G ^a   Bourgeois, G ^a   Ferron, A ^a   Baier, N ^a   Gravrand, O ^a   Barnes, J P ^a   Papon, A M ^a   Milesi, F ^a   Kerlain, A ^b   Rubaldo, L ^b  

^a CEA LETI   (France)

^b SOFRADIR   (France)

Author keywords

arsenic implantation; focal plane array; HgCdTe; LWIR; p on n photodiode; VLWIR

Indexed keywords

ARSENIC IMPLANTATION; FOCAL PLANES; HGCDTE; LWIR; P-ON-N PHOTODIODE; VLWIR;

ATOMIC PHYSICS; DEFECTS; EPITAXIAL GROWTH; INFORMATION TECHNOLOGY; INFRARED DEVICES; INFRARED RADIATION; MERCURY (METAL); MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NUCLEAR ENERGY; PHOTODIODES; TRANSMISSION ELECTRON MICROSCOPY;

ARSENIC;

EID: 80051591455     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1692-z     Document Type: Conference Paper

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