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Applied Physics Letters

Volumn 99, Issue 5, 2011, Pages

Increased carrier generation rate in Si nanocrystals in SiO2 investigated by induced absorption

(6) De Boer, W D A M a Trinh, M T a Timmerman, D a Schins, J M b Siebbeles, L D A b Gregorkiewicz, T a

a UNIVERSITY OF AMSTERDAM (Netherlands)

b DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; CARRIER GENERATION; CARRIER MULTIPLICATION; DECAY CHARACTERISTICS; INDUCED ABSORPTION; MATRIX; OPTICAL GENERATION; PHOTOLUMINESCENCE QUANTUM YIELDS; PHOTON ENERGY EXCITATION; SEMICONDUCTOR NANOCRYSTALS; SI NANOCRYSTAL; SIMILAR MATERIAL; TIME-RESOLVED;

ABSORPTION; QUANTUM YIELD; SILICON COMPOUNDS;

NANOCRYSTALS;

EID: 80051578257 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3622308 Document Type: Article

Times cited : (24)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.