Electronic structure at the interfaces of vertically aligned zinc oxide nanowires and sensitizing layers in photochemical solar cells

Journal of Physics D: Applied Physics

Volumn 44, Issue 32, 2011, Pages

  Chen, Z H ^a   Liu, C P ^a   Wang, H E ^a   Tang, Y B ^a   Liu, Z T ^a   Zhang, W J ^a   Lee, S T ^a   Zapien, J A ^a   Bello, I ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM TELLURIDE; DYE-SENSITIZED SOLAR CELLS; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; LIGHT; LIGHT ABSORPTION; NANOWIRES; PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

ELECTRIC DIPOLE; EXCITED ELECTRONS; LIGHT ILLUMINATION; NANOWIRES (NWS); ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; VERTICALLY ALIGNED; ZINC OXIDE (ZNO); ZINC OXIDE NANOWIRES;

SOLAR CELLS;

EID: 80051495496     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/32/325108     Document Type: Article

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