Tight binding modeling of intermediate band solar cells based on InAs/GaAs quantum dot arrays

IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai

Volumn , Issue , 2011, Pages 36-37

  Mehdipour, Amir ^a   Ogawa, Matsuto ^a   Souma, Satofumi ^a  

^a KOBE UNIVERSITY   (Japan)

Author keywords

finite element method; Intermediate band solar cells; minibands; Quantum dots; tight binding method

Indexed keywords

DETAILED BALANCE; EFFICIENT DESIGNS; ENERGY BAND STRUCTURE; INAS/GAAS; INTERMEDIATE-BAND SOLAR CELLS; MINIBANDS; QUANTUM DOT; QUANTUM DOT ARRAYS; TIGHT BINDING METHODS; TIGHT-BINDING MODELING;

BAND STRUCTURE; BINDING ENERGY; CONVERSION EFFICIENCY; ELECTRON DEVICES; ELECTRONIC STRUCTURE; FINITE ELEMENT METHOD; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM EFFICIENCY;

EID: 79961153955     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMFEDK.2011.5944832     Document Type: Conference Paper

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