Analysis of electronic structure in quantum dot arrays for intermediate band solar cells

IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai

Volumn , Issue , 2011, Pages 114-115

  Kurome, Akihito ^a   Morigaki, Ryosuke ^a   Souma, Satofumi ^a   Ogawa, Matsuto ^a  

^a KOBE UNIVERSITY   (Japan)

Author keywords

GaAs; InAs; intermediate band solar cell; quantum dot array; strained quantum dot

Indexed keywords

DENSITY OF STATE; EFFECTIVE MASS APPROXIMATION; ELECTRON HOLE PAIRS; GAAS; INAS; INAS/GAAS; INTERMEDIATE-BAND SOLAR CELLS; PHOTOVOLTAIC DEVICES; QD ARRAYS; QUANTUM DOT ARRAYS; THEORETICAL RESULT; THEORETICAL STUDY; THIRD GENERATION; TWO PHOTON; Z-DIRECTIONS;

CONDUCTION BANDS; ELECTRON DEVICES; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; ENERGY HARVESTING; FINITE ELEMENT METHOD; INDIUM ARSENIDE; MULTIPHOTON PROCESSES; OPTICAL PROPERTIES; PHOTOVOLTAIC EFFECTS; SOLAR ENERGY; SOLAR POWER GENERATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79961140389     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMFEDK.2011.5944871     Document Type: Conference Paper

References (2)

1. Y. Okada, S. Yagi, and R. Oshima, Oyo Buturi, 79, (2010), pp. 206-212 (in Japanese).
2. T. Inoue et al., "Electron tomography of embedded semiconductor quantum dot," Appl. Phys. Lett. 92, 031902, (2008).