Identification of the deep-level defects in AlN single crystals: EPR and TL studies

Diamond and Related Materials

Volumn 20, Issue 7, 2011, Pages 1085-1089

  Soltamov, V A ^a   Ilyin, I V ^a   Soltamova, A A ^a   Tolmachev, D O ^a   Mokhov, E N ^a   Baranov, P G ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Aluminium nitride (AlN); Deep level defects; Electron paramagnetic resonance (EPR); Shallow Donors

Indexed keywords

ALN; ALN SINGLE CRYSTALS; DEEP DONOR; DEEP-LEVEL DEFECTS; DONOR ELECTRONS; ELECTRON PARAMAGNETIC RESONANCE (EPR); ENERGY LEVEL; EPR SIGNALS; EPR SPECTRA; G FACTORS; SHALLOW DONORS; X RAY IRRADIATION;

ALUMINUM COMPOUNDS; ANISOTROPY; CRYSTAL DEFECTS; DIFFRACTIVE OPTICS; ELECTRON RESONANCE; ELECTRON SPIN RESONANCE SPECTROSCOPY; NITRIDES; PARAMAGNETIC MATERIALS; PARAMAGNETIC RESONANCE; PARAMAGNETISM; THERMOLUMINESCENCE;

SINGLE CRYSTALS;

EID: 79960834109     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2011.04.009     Document Type: Article

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