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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2460-2462

Growth and characterization of InGaN for photovoltaic devices

(9) Boney, C a,b Hernandez, I a Pillai, R b Starikov, D a,b Bensaoula, A c Henini, M d Syperek, M e Misiewicz, J e Kudrawiec, R e

a Integrated Micro Sensors Inc (United States)

b University of Houston (United States)

c UNIVERSITY OF HOUSTON (United States)

d UNIVERSITY OF NOTTINGHAM (United Kingdom)

e WROCLAW UNIVERSITY OF TECHNOLOGY (Poland)

Author keywords

III nitrides; InGaN; Optoelectronics; Photovoltaics

Indexed keywords

BAND GAPS; CARRIER LOCALIZATION; CONTACTLESS ELECTROREFLECTANCE; III-NITRIDES; INGAN; MATERIAL DEFECT; NON-OPTIMIZED DEVICES; P-N JUNCTION; PHOTOLUMINESCENCE MEASUREMENTS; PHOTORESPONSES; PHOTOVOLTAIC DEVICES; PHOTOVOLTAICS; SHUNT AND SERIES RESISTANCE; SPECTRAL CONDITIONS; STOKES SHIFT; TIME-RESOLVED;

ENERGY GAP; GALLIUM COMPOUNDS; GROWTH (MATERIALS); NANOSTRUCTURED MATERIALS; NITRIDES; SEMICONDUCTOR QUANTUM WELLS; SOLAR POWER GENERATION;

PHOTOVOLTAIC EFFECTS;

EID: 79960745803 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201000993 Document Type: Article

Times cited : (12)

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