|
Volumn 21, Issue 30, 2011, Pages 11306-11311
|
Ladder polysilsesquioxane for wide-band semiconductors: Synthesis, optical properties and doped electrophosphorescent device
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ACTIVE LAYER;
AFM;
BLUE EMISSION;
BLUE LIGHT-EMITTING;
ELECTROPHOSPHORESCENT DEVICES;
FILM-FORMING;
HIGH THERMAL;
HOST MATERIALS;
MALDI TOF MS;
MORPHOLOGICAL STABILITY;
PERFORMANCE OF DEVICES;
PL SPECTRA;
POLYSILSESQUIOXANES;
SIDE-CHAINS;
TRIPLET ENERGY;
WIDE BAND GAP;
WIDE BAND SEMICONDUCTORS;
DOPING (ADDITIVES);
IRIDIUM;
IRIDIUM COMPOUNDS;
OPTICAL PROPERTIES;
OPTOELECTRONIC DEVICES;
PHOSPHORESCENCE;
|
EID: 79960739647
PISSN: 09599428
EISSN: 13645501
Source Type: Journal
DOI: 10.1039/c1jm11087j Document Type: Article |
Times cited : (16)
|
References (33)
|