DNA hybridization sensor based on AlGaN/GaN HEMT

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2483-2485

  Alur, Siddharth ^a   Thapa, Resham ^a   Gnaprakasa, Tony ^a   Wang, Yaqi ^a   Sharma, Yogesh ^a   Javalosa, Edritz ^d   Smith, Elizabeth ^c   Ahyi, Claude ^a   Simonian, Aleksandr ^b   Bozack, Michael ^a   Williams, John ^a   Park, Minseo ^a  

^a AUBURN UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c Bakersfield College   (United States)

^d UNIVERSITY OF ARIZONA   (United States)

Author keywords

AlGaN GaN; DNA hybridization; Drain current; PDMS

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; DNA CONCENTRATION; DNA HYBRIDIZATION; FABRICATED DEVICE; FUNCTIONALIZED; GATE CONTACT; GOLD-COATED; PDMS; PHOTO-DEFINABLE; ZERO GATE;

DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; GOLD COATINGS; HIGH ELECTRON MOBILITY TRANSISTORS; REUSABILITY; SENSORS;

DNA;

EID: 79960728198     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001164     Document Type: Article

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