Characteristics of field-effect devices with gate oxide modification by DNA

Applied Physics Letters

Volumn 87, Issue 10, 2005, Pages

  Xuan, G ^a   Kolodzey, J ^a   Kapoor, V ^a   Gonye, G ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b THOMAS JEFFERSON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING AGENTS; GATE OXIDE SURFACES; MICROMOLAR CONCENTRATION;

CONCENTRATION (PROCESS); CURRENT VOLTAGE CHARACTERISTICS; DNA; ELECTROCHEMISTRY; REAL TIME SYSTEMS;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 24644516993     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2041826     Document Type: Article

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