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Volumn 8, Issue 7-8, 2011, Pages 2457-2459
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Time dependence of water-reducing photocurrent with change of the characteristics of n-type GaN photo-illuminated working electrodes
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Author keywords
Anodic oxidation; GaN; Photocurrent; Photoelectrochemistry; Water reduction
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Indexed keywords
BAND GAPS;
GAN;
HYDROGEN ENERGY;
INITIAL STAGES;
NITRIDE SEMICONDUCTORS;
P-TYPE NITRIDES;
PHOTO-ELECTROCHEMISTRY;
PHOTOCORROSION;
PHOTOELECTROCHEMICAL REACTION;
PHOTOELECTROCHEMICALS;
SI-DOPING;
TIME DEPENDENCE;
WATER REDUCTION;
WATER SPLITTING;
WORKING ELECTRODE;
ANODIC OXIDATION;
CHEMICAL STABILITY;
CONVERSION EFFICIENCY;
ELECTROCHEMISTRY;
ELECTRODES;
ENERGY EFFICIENCY;
GALLIUM NITRIDE;
HIGH ENERGY PHYSICS;
SEMICONDUCTOR DOPING;
PHOTOCURRENTS;
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EID: 79960704309
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.201000937 Document Type: Article |
Times cited : (9)
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References (5)
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