Time variation of GaN photoelectrochemical reactions affected by light intensity and applied bias

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2221-2223

  Koike, Kayo ^a   Sato, Keiichi ^a   Fujii, Katsushi ^a   Goto, Takenari ^a   Yao, Takafumi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Electrochemistry; Electrodes; GaN; MOVPE; Photocurrent

Indexed keywords

APPLIED BIAS; CONTINUOUS REACTIONS; COUNTER ELECTRODES; GAN; LIGHT INTENSITY; MOVPE; PHOTOELECTROCHEMICAL REACTION; TIME VARIATIONS;

ELECTROCHEMISTRY; ELECTRODES; GALLIUM ALLOYS; PHOTOCURRENTS;

GALLIUM NITRIDE;

EID: 77955831961     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983450     Document Type: Conference Paper

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