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Volumn 100, Issue 4, 2010, Pages 917-924

Analysis of trace impurities in semiconductor gas via cavity-enhanced direct frequency comb spectroscopy

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SENSITIVITY; BACKGROUND GAS; BROAD-BAND SPECTRUM; CONVENTIONAL SYSTEMS; DETECTION SENSITIVITY; FREQUENCY COMBS; HIGH BANDWIDTH; HIGH RESOLUTION; HIGH SENSITIVITY; III-V SEMICONDUCTOR COMPOUNDS; IMPURITIES IN; NONLINEAR OPTICAL PROCESS; PROCESS GAS; PROOF-OF-PRINCIPLE EXPERIMENTS; RAPID DATA ACQUISITION; SINGLE-CHANNEL; SPECTRAL LINE; SPECTRAL REGION; TRACE DETECTION; TRACE GAS DETECTION; TRACE IMPURITIES; WATER IMPURITIES;

EID: 79960170061     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-010-4132-5     Document Type: Article
Times cited : (37)

References (29)
  • 23
    • 82755187481 scopus 로고    scopus 로고
    • C10-1109, Available from Semiconductor Equipment and Materials International, 3081 Zanker Road, San Jose, CA 95134, USA
    • SEMI Standard, C10-1109, Guide for Determination of Method Detection Limits. Available from Semiconductor Equipment and Materials International, 3081 Zanker Road, San Jose, CA 95134, USA. http://www.semi.org
    • Guide for Determination of Method Detection Limits


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.