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Volumn 310, Issue 23, 2008, Pages 4780-4785
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Characterization of high-purity arsine and gallium arsenide epilayers grown by MOCVD
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Author keywords
A1. High purity; A1. Impurities; A1. Low temperature photoluminescence; A1. Purification; A3. Metal organic chemical vapor deposition; B2. Arsine; B2. GaAs
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Indexed keywords
ADSORPTION;
AIR CLEANERS;
AIR PURIFICATION;
ARSENIC COMPOUNDS;
CYLINDERS (SHAPES);
DISTILLATION;
EPILAYERS;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GALLIUM COMPOUNDS;
GAS ADSORPTION;
GASES;
GERMANIUM;
HYDROCARBON REFINING;
HYDROCARBONS;
IMPURITIES;
INDUSTRIAL CHEMICALS;
LIGHT EMISSION;
LUMINESCENCE;
METAL REFINING;
ORGANIC CHEMICALS;
ORGANIC COMPOUNDS;
ORGANOMETALLICS;
PHOTOLUMINESCENCE;
PURIFICATION;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING ORGANIC COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DEVICES;
SEMICONDUCTOR QUANTUM WELLS;
SENSITIVITY ANALYSIS;
VAPORS;
WATER VAPOR;
ZINC;
A1. HIGH PURITY;
A1. IMPURITIES;
A1. LOW TEMPERATURE PHOTOLUMINESCENCE;
A1. PURIFICATION;
A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION;
B2. ARSINE;
B2. GAAS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
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EID: 56249094804
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.08.023 Document Type: Article |
Times cited : (12)
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References (31)
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