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Volumn 310, Issue 23, 2008, Pages 4780-4785

Characterization of high-purity arsine and gallium arsenide epilayers grown by MOCVD

Author keywords

A1. High purity; A1. Impurities; A1. Low temperature photoluminescence; A1. Purification; A3. Metal organic chemical vapor deposition; B2. Arsine; B2. GaAs

Indexed keywords

ADSORPTION; AIR CLEANERS; AIR PURIFICATION; ARSENIC COMPOUNDS; CYLINDERS (SHAPES); DISTILLATION; EPILAYERS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GAS ADSORPTION; GASES; GERMANIUM; HYDROCARBON REFINING; HYDROCARBONS; IMPURITIES; INDUSTRIAL CHEMICALS; LIGHT EMISSION; LUMINESCENCE; METAL REFINING; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; PHOTOLUMINESCENCE; PURIFICATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR QUANTUM WELLS; SENSITIVITY ANALYSIS; VAPORS; WATER VAPOR; ZINC;

EID: 56249094804     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.023     Document Type: Article
Times cited : (12)

References (31)
  • 4
    • 56249111020 scopus 로고    scopus 로고
    • M.W. Raynor, J. Lapenta, H. Spicer, Development in the measurement and removal of ultratrace germane contamination in high purity arsine, ICMOVPE-XIII Abstract, Miyazaki, Japan, 2006, pp. 397-398.
    • M.W. Raynor, J. Lapenta, H. Spicer, Development in the measurement and removal of ultratrace germane contamination in high purity arsine, ICMOVPE-XIII Abstract, Miyazaki, Japan, 2006, pp. 397-398.
  • 12
    • 56249125017 scopus 로고    scopus 로고
    • T. Maeda, et al., US Patent 5,064,778.
    • T. Maeda, et al., US Patent 5,064,778.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.