Molecular junctions made of tungsten-polyoxometalate self-assembled monolayers: Towards polyoxometalate-based molecular electronics devices

Microelectronic Engineering

Volumn 88, Issue 8, 2011, Pages 2775-2777

  Velessiotis, D ^a   Douvas, A M ^a   Athanasiou, S ^a   Nilsson, B ^b   Petersson, G ^b   Sodervall U ^b   Alestig, G ^b   Argitis, P ^a   Glezos, N ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Current voltage characteristics; Molecular junctions; Polyoxometalate monolayers; Tunnelling

Indexed keywords

BARRIER HEIGHTS; CONDUCTION MECHANISM; ELECTRICAL CONDUCTION; ELECTRODE DISTANCES; HYBRID SILICON; MOLECULAR ELECTRONICS DEVICE; MOLECULAR JUNCTION; POLYOXOMETALATE ANIONS; POLYOXOMETALATE MONOLAYERS;

CURRENT VOLTAGE CHARACTERISTICS; MOLECULAR ELECTRONICS; ORGANIC POLYMERS; OXIDES; TUNGSTEN;

SELF ASSEMBLED MONOLAYERS;

EID: 79960053933     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.01.039     Document Type: Conference Paper

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