Fine control of critical dimension for the fabrication of large bandgap high frequency photonic and phononic crystals

Microelectronic Engineering

Volumn 88, Issue 8, 2011, Pages 2233-2235

  Cuffe, J ^a,b   Dudek, D ^b   Kehagias, N ^b   Chapuis, P O ^b   Reboud, V ^b   Alsina, F ^b   McInerney, J G ^a   Sotomayor Torres, C M ^b,c  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b CATALAN INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY ICN2   (Spain)

^c INSTITUCIÓ CATALANA DE RECERCA I ESTUDIS AVANÇATS ICREA   (Spain)

Author keywords

Electron beam lithography; Phononic crystal; Photonic crystal; PhoXonic crystal; Reactive ion etching

Indexed keywords

BAND GAPS; CRITICAL DIMENSION; DISPERSION RELATIONS; DOSE VARIATIONS; HIGH FREQUENCY; PHONONIC CRYSTAL; PHOXONIC CRYSTAL; REACTIVE ION; THERMAL OXIDATION;

CRYSTAL SYMMETRY; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ENERGY GAP; PHONONS; REACTIVE ION ETCHING;

PHOTONIC CRYSTALS;

EID: 79960046434     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.12.036     Document Type: Conference Paper

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