SCOPUS 정보 검색 플랫폼

Volumn 21, Issue 13, 2011, Pages 2593-2598

E-field control of exchange bias and deterministic magnetization switching in AFM/FM/FE multiferroic heterostructures

(4) Liu, Ming a,b Lou, Jing a Li, Shandong a Sun, Nian X a

a Northeastern University (United States)

b ARGONNE NATIONAL LABORATORY (United States)

Author keywords

180 degree magnetization switching; exchange coupling; magnetoelectric coupling (ME); magnetoelectric random access memories; multiferroics

Indexed keywords

AFM; ANTIFERROMAGNETICS; DYNAMIC MAGNETIZATION; E-FIELD; ELECTRICAL POLARIZATION; EXCHANGE BIAS; EXCHANGE-BIAS FIELDS; FERROELECTRIC PHASIS; FERROELECTRIC RANDOM ACCESS MEMORIES; MAGNETIC BITS; MAGNETIC MEMORIES; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIZATION SWITCHING; MAGNETOELECTRIC COUPLINGS; MEDIATED INTERACTION; MEMORY TECHNOLOGY; MULTIFERROIC COMPOSITES; MULTIFERROIC MATERIALS; MULTIFERROICS; NON-VOLATILE; NOVEL INFORMATION; RANDOM ACCESS MEMORIES; ROOM TEMPERATURE; SWITCHABLE; UNIAXIAL ANISOTROPY; UNIDIRECTIONAL ANISOTROPY;

ANISOTROPY; ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; COMPETITION; CRYSTALS; ELECTRIC FIELDS; ELECTRIC PROPERTIES; EXCHANGE COUPLING; FERROELECTRICITY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; LEAD; MAGNETIC STORAGE; MAGNETIZATION; MRAM DEVICES; NIOBIUM COMPOUNDS; SWITCHING;

RANDOM ACCESS STORAGE;

EID: 79960019873 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201002485 Document Type: Article

Times cited : (164)

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