Novel multi-level PCRAM cell with Ta2O5 barrier layer in between a graded Ge2Sb2Te5 stack

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2011, Pages 62-63

  Gyanathan, Ashvini ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; GRADED GE; HIGH DENSITY; MULTI-BITS; MULTI-LEVEL; PCRAM CELLS; PHASE CHANGE RANDOM ACCESS MEMORY;

GERMANIUM; PHASE CHANGE MEMORY; THERMOANALYSIS;

RANDOM ACCESS STORAGE;

EID: 79959951679     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2011.5872233     Document Type: Conference Paper

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6. M. L. Grilli et al, Appl. Phy. A 71 2000, pp. 71-76